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Direct measurement of Leff and channel profile in MOSFETs using 2-D carrier profiling techniques

Date

1998
Proceedings Paper
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dc.contributor.authorDe Wolf, Peter
dc.contributor.authorStephenson, Robert
dc.contributor.authorBiesemans, Serge
dc.contributor.authorJansen, Philippe
dc.contributor.authorBadenes, Gonçal
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorVandervorst, Wilfried
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorVandervorst, Wilfried
dc.date.accessioned2021-09-30T11:46:32Z
dc.date.available2021-09-30T11:46:32Z
dc.date.embargo9999-12-31
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2519
dc.source.beginpage559
dc.source.conferenceTechnical Digest International Electron Devices Meeting - IEDM
dc.source.conferencedate6/12/1998
dc.source.conferencelocationSan Francisco, CA USA
dc.source.endpage562
dc.title

Direct measurement of Leff and channel profile in MOSFETs using 2-D carrier profiling techniques

dc.typeProceedings paper
dspace.entity.typePublication
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