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FETs on 2-D materials: deconvolution of the channel and contact characteristics by four-terminal resistance measurements on WSe2 transistors
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FETs on 2-D materials: deconvolution of the channel and contact characteristics by four-terminal resistance measurements on WSe2 transistors
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Date
2017
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Sutar, Surajit
;
Asselberghs, Inge
;
Lin, Dennis
;
Thean, Aaron
;
Radu, Iuliana
Journal
IEEE Transactions on Electron Devices
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1902
since deposited on 2021-10-24
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Acq. date: 2025-12-15
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Views
1902
since deposited on 2021-10-24
1
last month
Acq. date: 2025-12-15
Citations