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Stack optimization of oxide-based RRAM for fast write speed (<1 $ls) at low operating current (<10 $lA)
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Stack optimization of oxide-based RRAM for fast write speed (<1 $ls) at low operating current (<10 $lA)
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Date
2016
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32971.pdf
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Chen, Michael
;
Goux, Ludovic
;
Fantini, Andrea
;
Degraeve, Robin
;
Redolfi, Augusto
;
Groeseneken, Guido
;
Jurczak, Gosia
Journal
Solid-State Electronics
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1932
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Acq. date: 2025-12-15
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Metrics
Views
1932
since deposited on 2021-10-23
3
last month
Acq. date: 2025-12-15
Citations