Publication:

Stack optimization of oxide-based RRAM for fast write speed (<1 $ls) at low operating current (<10 $lA)

Date

2016
Journal article
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dc.contributor.authorChen, Michael
dc.contributor.authorGoux, Ludovic
dc.contributor.authorFantini, Andrea
dc.contributor.authorDegraeve, Robin
dc.contributor.authorRedolfi, Augusto
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorJurczak, Gosia
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorRedolfi, Augusto
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.date.accessioned2021-10-23T10:15:46Z
dc.date.available2021-10-23T10:15:46Z
dc.date.embargo9999-12-31
dc.date.issued2016
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26428
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0038110116300454
dc.source.beginpage198
dc.source.endpage203
dc.source.journalSolid-State Electronics
dc.source.volume125
dc.title

Stack optimization of oxide-based RRAM for fast write speed (<1 $ls) at low operating current (<10 $lA)

dc.typeJournal article
dspace.entity.typePublication
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