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Intercomparison of 2-D carrier profiles in MOSFET structures obtaind with scanning resistance microscopy and inverse modeling

Date

1999
Proceedings Paper
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dc.contributor.authorDe Wolf, Peter
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorSmith, H.
dc.contributor.authorKhalil, N.
dc.contributor.imecauthorVandervorst, Wilfried
dc.date.accessioned2021-10-06T11:00:29Z
dc.date.available2021-10-06T11:00:29Z
dc.date.embargo9999-12-31
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3393
dc.source.beginpage148
dc.source.conference5th International Workshop on the Measurement, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors
dc.source.conferencedate28/03/1999
dc.source.conferencelocationResearch Triangle Park, NC USA
dc.source.endpage154
dc.title

Intercomparison of 2-D carrier profiles in MOSFET structures obtaind with scanning resistance microscopy and inverse modeling

dc.typeProceedings paper
dspace.entity.typePublication
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