Publication:

RTS Noise Characterization of Trap Properties in InGaAs nFinFETs

Date

2023
Journal article
https://doi.org/10.1109/TED.2023.3278612
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dc.contributor.authorXiao, Xiaolei
dc.contributor.authorHe, Liang
dc.contributor.authorChen, Hua
dc.contributor.authorWang, Xianyu
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2024-01-11T16:16:10Z
dc.date.available2023-07-16T17:16:06Z
dc.date.available2024-01-11T16:16:10Z
dc.date.issued2023
dc.description.wosFundingTextThis work was supported in part by the National Natural Science Foundation of China under Grant 61106062,in part by the Fundamental Research Funds for the Central Universities under Grant JB181409, in part by the Equipment Pre-Research Project of China under Grant 41402010102, and in part by the Wuhu and Xidian University Special Fund for Industry-University-Research Cooperation under Grant XWYCXY-012021016. The review of this article wasarranged by Editor M. M. Hussain.
dc.identifier.doi10.1109/TED.2023.3278612
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/42169
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage3496
dc.source.endpage3503
dc.source.issue7
dc.source.journalIEEE TRANSACTIONS ON ELECTRON DEVICES
dc.source.numberofpages8
dc.source.volume70
dc.subject.keywordsRANDOM TELEGRAPH SIGNALS
dc.subject.keywordsRECOMBINATION
dc.subject.keywordsGENERATION
dc.subject.keywordsDEFECTS
dc.subject.keywordsIDENTIFICATION
dc.subject.keywordsLIFETIMES
dc.subject.keywordsCAPTURE
dc.subject.keywordsVOLTAGE
dc.subject.keywordsMOSFET
dc.title

RTS Noise Characterization of Trap Properties in InGaAs nFinFETs

dc.typeJournal article
dspace.entity.typePublication
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