Publication:

Atomic layer deposition of Al2O3 on S-passivated Ge

Date

2011
Journal article
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dc.contributor.authorSioncke, Sonja
dc.contributor.authorCeuppens, Joris
dc.contributor.authorLin, Dennis
dc.contributor.authorNyns, Laura
dc.contributor.authorDelabie, Annelies
dc.contributor.authorStruyf, Herbert
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorMuller, Matthias
dc.contributor.authorBeckhoff, Burkhard
dc.contributor.authorCaymax, Matty
dc.contributor.imecauthorCeuppens, Joris
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorStruyf, Herbert
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-19T18:58:19Z
dc.date.available2021-10-19T18:58:19Z
dc.date.embargo9999-12-31
dc.date.issued2011
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19799
dc.source.beginpage1553
dc.source.endpage1556
dc.source.issue7
dc.source.journalMicroelectronic Engineering
dc.source.volume88
dc.title

Atomic layer deposition of Al2O3 on S-passivated Ge

dc.typeJournal article
dspace.entity.typePublication
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