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Photosensitized Chemically Amplified Resist (PSCAR) 2.0 for high-throughput and high-resolution EUV lithography: dual photosensitization of acid generation and quencher decomposition by flood exposure
Publication:
Photosensitized Chemically Amplified Resist (PSCAR) 2.0 for high-throughput and high-resolution EUV lithography: dual photosensitization of acid generation and quencher decomposition by flood exposure
Date
2017
Proceedings Paper
https://doi.org/10.1117/12.2258217
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Nagahara, Seiji
;
Carcasi, Michael
;
Shiraishi, Gosuke
;
Nakagawa, Hisashi
;
Dei, Satoshi
;
Shiozawa, Takahiro
;
Nafus, Kathleen
;
De Simone, Danilo
;
Vandenberghe, Geert
;
Stock, Hans-Jürgen
;
Küchler, Bernd
;
Hori, Masafumi
;
Naruoka, Takehiko
;
Nagai, Tomoki
;
Minekawa, Yukie
;
Iseki, Tomohiri
;
Kondo, Yoshihiro
;
Yoshihara, Kosuke
;
Kamei, Yuya
;
Tomono, Masaru
;
Shimada, Ryo
;
Biesemans, Serge
;
Nakashima, Hideo
;
Foubert, Philippe
;
Buitrago, Elizabeth
;
Vockenhuber, Michaela
;
Ekinci, Yasin
;
Oshima, Akihiro
;
Tagawa, Seiichi
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2001
since deposited on 2021-10-24
Acq. date: 2025-10-26
Citations
Metrics
Views
2001
since deposited on 2021-10-24
Acq. date: 2025-10-26
Citations