Publication:

Photosensitized Chemically Amplified Resist (PSCAR) 2.0 for high-throughput and high-resolution EUV lithography: dual photosensitization of acid generation and quencher decomposition by flood exposure

Date

2017
Proceedings Paper
https://doi.org/10.1117/12.2258217
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dc.contributor.authorNagahara, Seiji
dc.contributor.authorCarcasi, Michael
dc.contributor.authorShiraishi, Gosuke
dc.contributor.authorNakagawa, Hisashi
dc.contributor.authorDei, Satoshi
dc.contributor.authorShiozawa, Takahiro
dc.contributor.authorNafus, Kathleen
dc.contributor.authorDe Simone, Danilo
dc.contributor.authorVandenberghe, Geert
dc.contributor.authorStock, Hans-Jürgen
dc.contributor.authorKüchler, Bernd
dc.contributor.authorHori, Masafumi
dc.contributor.authorNaruoka, Takehiko
dc.contributor.authorNagai, Tomoki
dc.contributor.authorMinekawa, Yukie
dc.contributor.authorIseki, Tomohiri
dc.contributor.authorKondo, Yoshihiro
dc.contributor.authorYoshihara, Kosuke
dc.contributor.authorKamei, Yuya
dc.contributor.authorTomono, Masaru
dc.contributor.imecauthorNafus, Kathleen
dc.contributor.imecauthorDe Simone, Danilo
dc.contributor.imecauthorVandenberghe, Geert
dc.contributor.imecauthorNaruoka, Takehiko
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.imecauthorFoubert, Philippe
dc.contributor.orcidimecDe Simone, Danilo::0000-0003-3927-5207
dc.date.accessioned2021-10-24T09:57:09Z
dc.date.available2021-10-24T09:57:09Z
dc.date.issued2017
dc.identifier.doi10.1117/12.2258217
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29057
dc.source.beginpage101460G
dc.source.conferenceAdvances in Patterning Materials and Processes XXXIV
dc.source.conferencedate26/02/2017
dc.source.conferencelocationSan Jose, CA USA
dc.title

Photosensitized Chemically Amplified Resist (PSCAR) 2.0 for high-throughput and high-resolution EUV lithography: dual photosensitization of acid generation and quencher decomposition by flood exposure

dc.typeProceedings paper
dspace.entity.typePublication
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