D.C. and low frequency noise characteristics of g-irradiated gate-all-around silicon-on-insulator MOS transistors

dc.contributor.author	Simoen, Eddy
dc.contributor.author	Claeys, Cor
dc.contributor.author	Coenen, S.
dc.contributor.author	Decreton, M.
dc.contributor.imecauthor	Simoen, Eddy
dc.contributor.orcidimec	Simoen, Eddy::0000-0002-5218-4046
dc.date.accessioned	2021-09-29T13:16:47Z
dc.date.available	2021-09-29T13:16:47Z
dc.date.embargo	9999-12-31
dc.date.issued	1995
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/881
dc.source.beginpage	1
dc.source.endpage	8
dc.source.issue	1
dc.source.journal	Solid State Electronics
dc.source.volume	38
dc.title	D.C. and low frequency noise characteristics of g-irradiated gate-all-around silicon-on-insulator MOS transistors
dc.type	Journal article
dspace.entity.type	Publication
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