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AlGaN/GaN/AlGaN double heterostructures on 4 inch Si substrates for high breakdown voltage field-effect transistors with low on-resistance
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1930 since deposited on 2021-10-17
1last month
Acq. date: 2026-04-27
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Views
1930 since deposited on 2021-10-17
1last month
Acq. date: 2026-04-27
Citations