Publication:
Quantum transport study of transition-metal dichalcogenide top-contacted geometries investigating the impact of nonuniform doping, dielectric environment, and image-force barrier lowering
| dc.contributor.author | Baikadi, Pranay | |
| dc.contributor.author | Vandenberghe, William | |
| dc.contributor.author | Reyntjens, Peter | |
| dc.contributor.author | Kim, Raseong | |
| dc.contributor.author | van de Put, Maarten | |
| dc.contributor.imecauthor | Reyntjens, Peter | |
| dc.date.accessioned | 2025-04-03T07:33:01Z | |
| dc.date.available | 2025-01-11T17:18:35Z | |
| dc.date.available | 2025-04-03T07:33:01Z | |
| dc.date.issued | 2024 | |
| dc.description.wosFundingText | This material is based upon work supported by Intel Corporation. We would like to express our special thanks to Dr. Ashish Verma Penumatcha from the Technology Research division at Intel Corporation for the many fruitful discussions during the course of this work. We acknowl-edge the Texas Advanced Computing Center (TACC, http:// www.tacc.utexas.edu/) at The University of Texas at Austin for providing the high-performance computing resources. | |
| dc.identifier.doi | 10.1103/PhysRevApplied.22.064058 | |
| dc.identifier.issn | 2331-7019 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/45068 | |
| dc.publisher | AMER PHYSICAL SOC | |
| dc.source.beginpage | Art. 064058 | |
| dc.source.endpage | N/A | |
| dc.source.issue | 6 | |
| dc.source.journal | PHYSICAL REVIEW APPLIED | |
| dc.source.numberofpages | 15 | |
| dc.source.volume | 22 | |
| dc.subject.keywords | MOS2 TRANSISTORS | |
| dc.subject.keywords | PERFORMANCE | |
| dc.subject.keywords | CHANNEL | |
| dc.title | Quantum transport study of transition-metal dichalcogenide top-contacted geometries investigating the impact of nonuniform doping, dielectric environment, and image-force barrier lowering | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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