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First demonstration of 3D stacked Finfets at a 45nm fin pitch and 110nm gate pitch technology on 300mm wafers
Publication:
First demonstration of 3D stacked Finfets at a 45nm fin pitch and 110nm gate pitch technology on 300mm wafers
Date
2018
Proceedings Paper
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39447.pdf
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Vandooren, Anne
;
Franco, Jacopo
;
Wu, Zhicheng
;
Parvais, Bertrand
;
Li, Waikin
;
Walke, Amey
;
Peng, Lan
;
Deshpande, Paru
;
Rassoul, Nouredine
;
Hellings, Geert
;
Jamieson, Geraldine
;
Inoue, Fumihiro
;
Devriendt, Katia
;
Teugels, Lieve
;
Heylen, Nancy
;
Vecchio, Emma
;
Zheng, T.
;
Rosseel, Erik
;
Vanherle, Wendy
;
Hikavyy, Andriy
;
Mannaert, Geert
;
Chan, BT
;
Ritzenthaler, Romain
;
Mitard, Jerome
;
Ragnarsson, Lars-Ake
;
Waldron, Niamh
;
De Heyn, Vincent
;
Demuynck, Steven
;
Boemmels, Juergen
;
Mocuta, Dan
;
Ryckaert, Julien
;
Collaert, Nadine
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since deposited on 2021-10-26
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since deposited on 2021-10-26
423
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