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First demonstration of 3D stacked Finfets at a 45nm fin pitch and 110nm gate pitch technology on 300mm wafers

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dc.contributor.authorVandooren, Anne
dc.contributor.authorFranco, Jacopo
dc.contributor.authorWu, Zhicheng
dc.contributor.authorParvais, Bertrand
dc.contributor.authorLi, Waikin
dc.contributor.authorWalke, Amey
dc.contributor.authorPeng, Lan
dc.contributor.authorDeshpande, Paru
dc.contributor.authorRassoul, Nouredine
dc.contributor.authorHellings, Geert
dc.contributor.authorJamieson, Geraldine
dc.contributor.authorInoue, Fumihiro
dc.contributor.authorDevriendt, Katia
dc.contributor.authorTeugels, Lieve
dc.contributor.authorHeylen, Nancy
dc.contributor.authorVecchio, Emma
dc.contributor.authorZheng, T.
dc.contributor.authorRosseel, Erik
dc.contributor.authorVanherle, Wendy
dc.contributor.authorHikavyy, Andriy
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorWu, Zhicheng
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.imecauthorLi, Waikin
dc.contributor.imecauthorWalke, Amey
dc.contributor.imecauthorPeng, Lan
dc.contributor.imecauthorDeshpande, Paru
dc.contributor.imecauthorRassoul, Nouredine
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorJamieson, Geraldine
dc.contributor.imecauthorInoue, Fumihiro
dc.contributor.imecauthorDevriendt, Katia
dc.contributor.imecauthorTeugels, Lieve
dc.contributor.imecauthorHeylen, Nancy
dc.contributor.imecauthorVecchio, Emma
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorVanherle, Wendy
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorMannaert, Geert
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.contributor.orcidimecPeng, Lan::0000-0003-1824-126X
dc.contributor.orcidimecDeshpande, Paru::0000-0002-9693-5761
dc.contributor.orcidimecRassoul, Nouredine::0000-0001-9489-3396
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecJamieson, Geraldine::0000-0002-6750-097X
dc.contributor.orcidimecDevriendt, Katia::0000-0002-0662-7926
dc.contributor.orcidimecTeugels, Lieve::0000-0002-6613-9414
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecChan, BT::0000-0003-2890-0388
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-26T07:51:58Z
dc.date.available2021-10-26T07:51:58Z
dc.date.embargo9999-12-31
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32139
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8614654
dc.source.beginpage149
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate1/12/2018
dc.source.conferencelocationSan Francisco, CA USA
dc.source.endpage152
dc.title

First demonstration of 3D stacked Finfets at a 45nm fin pitch and 110nm gate pitch technology on 300mm wafers

dc.typeProceedings paper
dspace.entity.typePublication
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