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Strain study in transistors with SiC and SiGe source and drain by STEM nano beam diffraction

Date

2008-09
Proceedings Paper
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dc.contributor.authorFavia, Paola
dc.contributor.authorKlenov, Dmitri
dc.contributor.authorEneman, Geert
dc.contributor.authorVerheyen, Peter
dc.contributor.authorBauer,
dc.contributor.authorWeeks,
dc.contributor.authorThomas,
dc.contributor.authorBender, Hugo
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorBender, Hugo
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.date.accessioned2021-10-17T07:04:43Z
dc.date.available2021-10-17T07:04:43Z
dc.date.issued2008-09
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13716
dc.source.beginpage15
dc.source.conferenceEMC. 14th European Microscopy Congress. Volume 2: Materials Science
dc.source.conferencedate1/09/2008
dc.source.conferencelocationAachen Germany
dc.source.endpage16
dc.title

Strain study in transistors with SiC and SiGe source and drain by STEM nano beam diffraction

dc.typeProceedings paper
dspace.entity.typePublication
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