Publication:
The influence of the epitaxial growth process parameters on layer characteristics and device performance in Si-passivated Ge pMOSFETs
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1857 since deposited on 2021-10-17
2last month
Acq. date: 2026-05-19
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Views
1857 since deposited on 2021-10-17
2last month
Acq. date: 2026-05-19
Citations