Publication:
The influence of the epitaxial growth process parameters on layer characteristics and device performance in Si-passivated Ge pMOSFETs
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1853 since deposited on 2021-10-17
1last month
Acq. date: 2025-12-10
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Views
1853 since deposited on 2021-10-17
1last month
Acq. date: 2025-12-10
Citations