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The influence of the epitaxial growth process parameters on layer characteristics and device performance in Si-passivated Ge pMOSFETs

Date

2009
Meeting abstract
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dc.contributor.authorCaymax, Matty
dc.contributor.authorLeys, Frederik
dc.contributor.authorMitard, Jerome
dc.contributor.authorMartens, Koen
dc.contributor.authorYang, Lijun
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorMeuris, Marc
dc.contributor.authorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorMartens, Koen
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecMartens, Koen::0000-0001-7135-5536
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-17T21:31:47Z
dc.date.available2021-10-17T21:31:47Z
dc.date.embargo9999-12-31
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15070
dc.source.beginpage716
dc.source.conference215th Electrochemical Society Spring Meeting
dc.source.conferencedate24/05/2009
dc.source.conferencelocationSan Francisco, CA USA
dc.title

The influence of the epitaxial growth process parameters on layer characteristics and device performance in Si-passivated Ge pMOSFETs

dc.typeMeeting abstract
dspace.entity.typePublication
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