Publication:

Accurate EUV lithography simulation enabled by calibrated physical resist models

Date

2010-09
Journal article
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dc.contributor.authorKlostermann, U.K.
dc.contributor.authorMulders, T.
dc.contributor.authorSchmoeller, T.
dc.contributor.authorDemmerle, W.
dc.contributor.authorLorusso, Gian
dc.contributor.authorHendrickx, Eric
dc.contributor.imecauthorLorusso, Gian
dc.contributor.imecauthorHendrickx, Eric
dc.date.accessioned2021-10-18T17:42:21Z
dc.date.available2021-10-18T17:42:21Z
dc.date.embargo9999-12-31
dc.date.issued2010-09
dc.identifier.issn0038-111X
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17383
dc.identifier.urlhttp://www.electroiq.com/index/display/semiconductors-article-display/2744719178/articles/solid-state-technology/semiconductors/
dc.source.journalSolid State Technology
dc.title

Accurate EUV lithography simulation enabled by calibrated physical resist models

dc.typeJournal article
dspace.entity.typePublication
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