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A new high-k/metal gate CMOS integration scheme (Diffusion and Gate Replacement) suppressing gate height asymmetry and compatible with high-thermal budget memory technologies
Publication:
A new high-k/metal gate CMOS integration scheme (Diffusion and Gate Replacement) suppressing gate height asymmetry and compatible with high-thermal budget memory technologies
Date
2014
Proceedings Paper
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Ritzenthaler, Romain
;
Schram, Tom
;
Spessot, Alessio
;
Caillat, Christian
;
Cho, Moon Ju
;
Simoen, Eddy
;
Aoulaiche, Marc
;
Albert, Johan
;
Chew, Soon Aik
;
Noh, Kyung Bong
;
Son, Yunik
;
Fazan, Pierre
;
Horiguchi, Naoto
;
Thean, Aaron
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1978
since deposited on 2021-10-22
Acq. date: 2025-10-22
Citations
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Views
1978
since deposited on 2021-10-22
Acq. date: 2025-10-22
Citations