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On the thermal stability of Atomic Layer Deposition (ALD) TiN as gate electrode in MOS devices

Date

2002
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dc.contributor.authorWestlinder, J.
dc.contributor.authorSchram, T.
dc.contributor.authorPantisano, Luigi
dc.contributor.authorCartier, Eduard
dc.contributor.authorKerber, Andreas
dc.contributor.authorLujan, Guilherme
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorGroeseneken, Guido
dc.date.accessioned2021-10-15T00:00:54Z
dc.date.available2021-10-15T00:00:54Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7051
dc.source.conference33rd IEEE Semiconductor Interface Specialists Conference - SISC
dc.source.conferencedate5/12/2002
dc.source.conferencelocationSan Diego, CA USA
dc.title

On the thermal stability of Atomic Layer Deposition (ALD) TiN as gate electrode in MOS devices

dc.typeOral presentation
dspace.entity.typePublication
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