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Correlative 3D strain analysis in nanometer-sized semiconductor devices by precession electron diffraction, raman spectroscopy and FE simulations

Date

2017
Proceedings Paper
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dc.contributor.authorNanakoudis, Antonis
dc.contributor.authorNuytten, Thomas
dc.contributor.authorBender, Hugo
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorBals, Sara
dc.contributor.authorVerbeeck, Jo
dc.contributor.imecauthorNuytten, Thomas
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecNuytten, Thomas::0000-0002-5921-6928
dc.date.accessioned2021-10-24T10:02:33Z
dc.date.available2021-10-24T10:02:33Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29067
dc.source.conferenceMicroscopy of Semiconducting Materials - MSM XX
dc.source.conferencedate9/04/2017
dc.source.conferencelocationOxford UK
dc.title

Correlative 3D strain analysis in nanometer-sized semiconductor devices by precession electron diffraction, raman spectroscopy and FE simulations

dc.typeProceedings paper
dspace.entity.typePublication
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