Polarity Inversions in AlN Films on Sapphire Exploiting Silicon and Oxygen Diffusion during High-Temperature Annealing

Bonito Oliva, Valeria; Robin, Eric; Hagedorn, Sylvia; Kirmse, Holm; Rouviere, Jean-Luc; Okuno, Hanako; Damilano, Benjamin; Michon, Adrien; Remmele, Thilo; Schulz, Tobias; Amari, Houari; Albrecht, Martin; Vennegues, Philippe

doi:10.1021/acs.cgd.4c01641

Publication:

Polarity Inversions in AlN Films on Sapphire Exploiting Silicon and Oxygen Diffusion during High-Temperature Annealing

Date

2025

Journal article

https://doi.org/10.1021/acs.cgd.4c01641

Simple item page Full metadata Statistics

Author(s)

Bonito Oliva, Valeria

;

;

;

;

;

;

;

;

;

;

;

;

Journal

CRYSTAL GROWTH & DESIGN

Statistics

53 since deposited on 2025-07-17

3last month

Acq. date: 2026-04-06

Polarity Inversions in AlN Films on Sapphire Exploiting Silicon and Oxygen Diffusion during High-Temperature Annealing

Date

Author(s)

Journal

Abstract

Description

Statistics

Views

Citations

Statistics

Views

Citations