Publication:

Polarity Inversions in AlN Films on Sapphire Exploiting Silicon and Oxygen Diffusion during High-Temperature Annealing

Date

2025-JUL 10
Journal article
https://doi.org/10.1021/acs.cgd.4c01641
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dc.contributor.authorBonito Oliva, Valeria
dc.contributor.authorRobin, Eric
dc.contributor.authorHagedorn, Sylvia
dc.contributor.authorKirmse, Holm
dc.contributor.authorRouviere, Jean-Luc
dc.contributor.authorOkuno, Hanako
dc.contributor.authorDamilano, Benjamin
dc.contributor.authorMichon, Adrien
dc.contributor.authorRemmele, Thilo
dc.contributor.authorSchulz, Tobias
dc.contributor.authorAmari, Houari
dc.contributor.authorAlbrecht, Martin
dc.contributor.authorVennegues, Philippe
dc.contributor.imecauthorBonito Oliva, Valeria
dc.contributor.orcidimecBonito Oliva, Valeria::0000-0002-0790-5190
dc.date.accessioned2025-07-17T03:59:26Z
dc.date.available2025-07-17T03:59:26Z
dc.date.issued2025-JUL 10
dc.description.wosFundingTextThis work was supported by the French Program GaNeX, "Investissements d'Avenir" and by the German Federal Ministry of Education and Research (BMBF) within the Advanced UV for Life project (No. 03ZZ0134B).
dc.identifier.doi10.1021/acs.cgd.4c01641
dc.identifier.issn1528-7483
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/45910
dc.publisherAMER CHEMICAL SOC
dc.source.journalCRYSTAL GROWTH & DESIGN
dc.source.numberofpages12
dc.subject.keywordsELECTRON-DENSITY DISTRIBUTION
dc.subject.keywords2ND-HARMONIC GENERATION
dc.subject.keywordsCRYSTAL-STRUCTURE
dc.subject.keywordsEPITAXIAL-GROWTH
dc.subject.keywordsALUMINUM NITRIDE
dc.subject.keywordsEXTENDED DEFECTS
dc.subject.keywordsGAN
dc.subject.keywordsSURFACE
dc.subject.keywordsBUFFER
dc.subject.keywordsFACE
dc.title

Polarity Inversions in AlN Films on Sapphire Exploiting Silicon and Oxygen Diffusion during High-Temperature Annealing

dc.typeJournal article
dspace.entity.typePublication
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