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High-Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps
Publication:
High-Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps
Date
2023
Proceedings Paper
https://doi.org/10.1109/IRPS48203.2023.10117667
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Favero, D.
;
Cavaliere, A.
;
De Santi, C.
;
Borga, Matteo
;
Filho Goncalez, Walter
;
Geens, Karen
;
Bakeroot, Benoit
;
Decoutere, Stefaan
;
Meneghesso, G.
;
Zanoni, E.
;
Meneghini, M.
Journal
N/A
Abstract
Description
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Views
778
since deposited on 2023-07-15
Acq. date: 2025-10-23
Citations
Metrics
Views
778
since deposited on 2023-07-15
Acq. date: 2025-10-23
Citations