Publication:

High-Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps

Date

2023

Proceedings Paper

https://doi.org/10.1109/IRPS48203.2023.10117667

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Author(s)

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Filho Goncalez, Walter

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Bakeroot, Benoit

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Decoutere, Stefaan

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Journal

N/A

Metrics

783 since deposited on 2023-07-15

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Acq. date: 2026-01-10