Publication:
High-Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps
| dc.contributor.author | Favero, D. | |
| dc.contributor.author | Cavaliere, A. | |
| dc.contributor.author | De Santi, C. | |
| dc.contributor.author | Borga, Matteo | |
| dc.contributor.author | Filho Goncalez, Walter | |
| dc.contributor.author | Geens, Karen | |
| dc.contributor.author | Bakeroot, Benoit | |
| dc.contributor.author | Decoutere, Stefaan | |
| dc.contributor.author | Meneghesso, G. | |
| dc.contributor.author | Zanoni, E. | |
| dc.contributor.author | Meneghini, M. | |
| dc.contributor.imecauthor | Borga, Matteo | |
| dc.contributor.imecauthor | Filho Goncalez, Walter | |
| dc.contributor.imecauthor | Geens, Karen | |
| dc.contributor.imecauthor | Bakeroot, Benoit | |
| dc.contributor.imecauthor | Decoutere, Stefaan | |
| dc.contributor.orcidimec | Borga, Matteo::0000-0003-3087-6612 | |
| dc.contributor.orcidimec | Geens, Karen::0000-0003-1815-3972 | |
| dc.contributor.orcidimec | Bakeroot, Benoit::0000-0003-4392-1777 | |
| dc.contributor.orcidimec | Decoutere, Stefaan::0000-0001-6632-6239 | |
| dc.date.accessioned | 2024-05-23T10:19:22Z | |
| dc.date.available | 2023-07-15T17:05:47Z | |
| dc.date.available | 2024-05-23T10:19:22Z | |
| dc.date.issued | 2023 | |
| dc.description.wosFundingText | This work was carried out within the UltimateGaN project, that has received funding from the ECSEL Joint Undertaking (JU) under grant agreement No 826392. The JU receives support from the European Union's Horizon 2020 research and innovation programme and Austria, Belgium, Germany, Italy, Slovakia, Spain, Sweden, Norway, Switzerland. The UltimateGaN project is co-funded by the Ministry of Education, Universities and Research in Italy. | |
| dc.identifier.doi | 10.1109/IRPS48203.2023.10117667 | |
| dc.identifier.eisbn | 978-1-6654-5672-2 | |
| dc.identifier.issn | 1541-7026 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/42162 | |
| dc.publisher | IEEE | |
| dc.source.conference | 61st IEEE International Reliability Physics Symposium (IRPS) | |
| dc.source.conferencedate | MAR 26-30, 2023 | |
| dc.source.conferencelocation | Monterey | |
| dc.source.journal | N/A | |
| dc.source.numberofpages | 4 | |
| dc.title | High-Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps | |
| dc.type | Proceedings paper | |
| dspace.entity.type | Publication | |
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