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Comparative study of the interface passivation properties of LiF and Al2O3 using silicon MIS capacitor

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dc.contributor.authorParion, Jonathan
dc.contributor.authorScaffidi, Romain
dc.contributor.authorDuerinckx, Filip
dc.contributor.authorSivaramakrishnan Radhakrishnan, Hariharsudan
dc.contributor.authorFlandre, Denis
dc.contributor.authorPoortmans, Jef
dc.contributor.authorVermang, Bart
dc.date.accessioned2024-04-20T18:27:14Z
dc.date.available2024-04-20T18:27:14Z
dc.date.issued2024-APR 1
dc.description.wosFundingTextThis study was supported by the Special Research Fund of Hasselt University, with No. BOF22OWB15. The authors thank the teams of the nanofabrication shared facility (WINFAB) and electrical characterization platform (WELCOME) at UCLouvain for their availability and technical support.
dc.identifier.doi10.1063/5.0203484
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/43858
dc.publisherAIP Publishing
dc.source.beginpage142901
dc.source.issue14
dc.source.journalAPPLIED PHYSICS LETTERS
dc.source.numberofpages5
dc.source.volume124
dc.subject.keywordsLIGHT-EMITTING-DIODES
dc.subject.keywordsADMITTANCE SPECTROSCOPY
dc.title

Comparative study of the interface passivation properties of LiF and Al2O3 using silicon MIS capacitor

dc.typeJournal article
dspace.entity.typePublication
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