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Optimization of standard As ion implantation for NMOS Si bulk FinFETs extension

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dc.contributor.authorSasaki, Yuichiro
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorChew, Soon Aik
dc.contributor.authorChiarella, Thomas
dc.contributor.authorHellings, Geert
dc.contributor.authorTogo Mitsuhiro,
dc.contributor.authorZschaetzsch Gerd,
dc.contributor.authorThean, Aaron
dc.contributor.authorHoriguchi, Naoto
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-21T11:43:43Z
dc.date.available2021-10-21T11:43:43Z
dc.date.embargo9999-12-31
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23039
dc.identifier.urlhttp://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6644496&tag=1
dc.source.beginpage222
dc.source.conference13th International Workshop on Junction Technology - IWJT
dc.source.conferencedate6/06/2013
dc.source.conferencelocationKyoto Japan
dc.source.endpage25
dc.title

Optimization of standard As ion implantation for NMOS Si bulk FinFETs extension

dc.typeProceedings paper
dspace.entity.typePublication
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