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On the 1/f noise of triple-gate field-effect transistors with high-k gate dielectric
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On the 1/f noise of triple-gate field-effect transistors with high-k gate dielectric
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Date
2009
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Lukyanchikova, N.
;
Garbar, N.
;
Kudina, V.
;
Smolanka, A.
;
Put, Sofie
;
Claeys, Cor
;
Simoen, Eddy
Journal
Applied Physics Letters
Abstract
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1966
since deposited on 2021-10-18
1
last month
Acq. date: 2026-04-28
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Statistics
Views
1966
since deposited on 2021-10-18
1
last month
Acq. date: 2026-04-28
Citations