Publication:

Comphy v3.0-A compact-physics framework for modeling charge trapping related reliability phenomena in MOS devices

 
dc.contributor.authorWaldhoer, Dominic
dc.contributor.authorSchleich, Christian
dc.contributor.authorMichl, Jakob
dc.contributor.authorGrill, Alexander
dc.contributor.authorClaes, Dieter
dc.contributor.authorKarl, Alexander
dc.contributor.authorKnobloch, Theresia
dc.contributor.authorRzepa, Gerhard
dc.contributor.authorFranco, Jacopo
dc.contributor.authorKaczer, Ben
dc.contributor.authorWaltl, Michael
dc.contributor.authorGrasser, Tibor
dc.contributor.imecauthorGrill, Alexander
dc.contributor.imecauthorClaes, Dieter
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecGrill, Alexander::0000-0003-1615-1033
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecClaes, Dieter::0000-0002-0356-0973
dc.date.accessioned2023-08-02T09:36:18Z
dc.date.available2023-06-23T20:39:03Z
dc.date.available2023-08-02T09:36:18Z
dc.date.embargo2023-07-31
dc.date.issued2023
dc.description.wosFundingTextThe financial support by the Austrian Federal Ministry for Digital and Economic Affairs, the National Foundation for Research, Technology and Development, the Christian Doppler Research Association, and the European Research Council (ERC) under grant agreement no. 101055379 is gratefully acknowledged.
dc.identifier.doi10.1016/j.microrel.2023.115004
dc.identifier.issn0026-2714
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/42076
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD
dc.source.beginpageArt. 115004
dc.source.endpagena
dc.source.issueJuly
dc.source.journalMICROELECTRONICS RELIABILITY
dc.source.numberofpages15
dc.source.volume146
dc.subject.keywordsBIAS TEMPERATURE INSTABILITY
dc.subject.keywordsVOLTAGE INSTABILITY
dc.subject.keywordsINTERFACE
dc.subject.keywordsDEFECTS
dc.subject.keywordsNBTI
dc.subject.keywordsDEPENDENCE
dc.subject.keywordsEMISSION
dc.subject.keywordsNOISE
dc.subject.keywordsDEGRADATION
dc.subject.keywordsCAPTURE
dc.title

Comphy v3.0-A compact-physics framework for modeling charge trapping related reliability phenomena in MOS devices

dc.typeJournal article
dspace.entity.typePublication
Files

Original bundle

Name:
1-s2.0-S002627142300104X-main.pdf
Size:
2.83 MB
Format:
Adobe Portable Document Format
Description:
Published version
Publication available in collections: