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Conference contributions
A low-frequency noise study of the physical hot-carrier degradation mechanisms in lowly-doped-drain Si MOSFETs
Publication:
A low-frequency noise study of the physical hot-carrier degradation mechanisms in lowly-doped-drain Si MOSFETs
Date
1996
Meeting abstract
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1600.pdf
92.12 KB
Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Vasina, Petr
;
Simoen, Eddy
;
Sikula, J.
;
Claeys, Cor
Journal
Abstract
Description
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1999
since deposited on 2021-09-29
Acq. date: 2025-10-23
Citations
Metrics
Views
1999
since deposited on 2021-09-29
Acq. date: 2025-10-23
Citations