Publication:

A low-frequency noise study of the physical hot-carrier degradation mechanisms in lowly-doped-drain Si MOSFETs

Date

1996
Meeting abstract
Simple item page Full metadata Statistics
 
dc.contributor.authorVasina, Petr
dc.contributor.authorSimoen, Eddy
dc.contributor.authorSikula, J.
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-09-29T15:47:23Z
dc.date.available2021-09-29T15:47:23Z
dc.date.embargo9999-12-31
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1625
dc.source.beginpageCM-P-36
dc.source.conferenceBelgische natuurkundige vereniging. Algemene Wetenschappelijke Vergadering
dc.source.conferencedate6/06/1996
dc.source.conferencelocationBrussel Belgium
dc.title

A low-frequency noise study of the physical hot-carrier degradation mechanisms in lowly-doped-drain Si MOSFETs

dc.typeMeeting abstract
dspace.entity.typePublication
Files

Original bundle

Name:
1600.pdf
Size:
92.12 KB
Format:
Adobe Portable Document Format
Download
Publication available in collections:
Conference contributions