Publication:

First demonstration of vertically stacked ferroelectric Al doped HfO2 devices for NAND applications

Date

2017
Proceedings Paper
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dc.contributor.authorFlorent, Karine
dc.contributor.authorLavizzari, Simone
dc.contributor.authorDi Piazza, Luca
dc.contributor.authorPopovici, Mihaela Ioana
dc.contributor.authorVecchio, Emma
dc.contributor.authorPotoms, Goedele
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorVan Houdt, Jan
dc.contributor.imecauthorDi Piazza, Luca
dc.contributor.imecauthorPopovici, Mihaela Ioana
dc.contributor.imecauthorVecchio, Emma
dc.contributor.imecauthorPotoms, Goedele
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2021-10-24T04:46:16Z
dc.date.available2021-10-24T04:46:16Z
dc.date.embargo9999-12-31
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28342
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7998162/
dc.source.beginpage158
dc.source.conferenceSymposium on VLSI Technology
dc.source.conferencedate5/06/2017
dc.source.conferencelocationKyoto Japan
dc.source.endpage159
dc.title

First demonstration of vertically stacked ferroelectric Al doped HfO2 devices for NAND applications

dc.typeProceedings paper
dspace.entity.typePublication
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