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Characteristics of low-energy nitrogen ion-implanted oxide and NO-annealed gate dielectrics

Date

2004
Journal article
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dc.contributor.authorLee, Shih Chung
dc.contributor.authorSimoen, Eddy
dc.contributor.authorBadenes, Gonçal
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-15T14:24:32Z
dc.date.available2021-10-15T14:24:32Z
dc.date.embargo9999-12-31
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9188
dc.source.beginpage1687
dc.source.endpage1690
dc.source.issue9
dc.source.journalSolid-State Electronics
dc.source.volume48
dc.title

Characteristics of low-energy nitrogen ion-implanted oxide and NO-annealed gate dielectrics

dc.typeJournal article
dspace.entity.typePublication
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