Publication:

300mm IGZO nFETs with low-T Ru contacts for localized doping and increased BEOL compatibility

Date

2020
Proceedings Paper
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dc.contributor.authorKljucar, Luka
dc.contributor.authorSmets, Quentin
dc.contributor.authorvan Setten, Michiel
dc.contributor.authorMitard, Jerome
dc.contributor.authorBelmonte, Attilio
dc.contributor.authorDekkers, Harold
dc.contributor.authorTeugels, Lieve
dc.contributor.authorMao, Ming
dc.contributor.authorPuliyalil, Harinarayanan
dc.contributor.authordel Agua Borniquel, Jose Ignacio
dc.contributor.authorDelhougne, Romain
dc.contributor.authorSankaran, Kiroubanand
dc.contributor.authorTokei, Zsolt
dc.contributor.imecauthorKljucar, Luka
dc.contributor.imecauthorSmets, Quentin
dc.contributor.imecauthorvan Setten, Michiel
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorBelmonte, Attilio
dc.contributor.imecauthorDekkers, Harold
dc.contributor.imecauthorTeugels, Lieve
dc.contributor.imecauthorMao, Ming
dc.contributor.imecauthorPuliyalil, Harinarayanan
dc.contributor.imecauthordel Agua Borniquel, Jose Ignacio
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorSankaran, Kiroubanand
dc.contributor.imecauthorTokei, Zsolt
dc.contributor.orcidimecSmets, Quentin::0000-0002-2356-5915
dc.contributor.orcidimecvan Setten, Michiel::0000-0003-0557-5260
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecDekkers, Harold::0000-0003-4778-5709
dc.contributor.orcidimecTeugels, Lieve::0000-0002-6613-9414
dc.contributor.orcidimecPuliyalil, Harinarayanan::0000-0002-9749-5307
dc.contributor.orcidimecSankaran, Kiroubanand::0000-0001-6988-7269
dc.date.accessioned2021-10-28T23:23:38Z
dc.date.available2021-10-28T23:23:38Z
dc.date.issued2020
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35397
dc.identifier.urlhttps://confit.atlas.jp/guide/event/ssdm2020/subject/J-6-03/advanced
dc.source.beginpageJ-6-03
dc.source.conferenceInternational Conference on Solid State Devices and Materials - SSDM
dc.source.conferencedate27/09/2020
dc.source.conferencelocationToyama Japan
dc.title

300mm IGZO nFETs with low-T Ru contacts for localized doping and increased BEOL compatibility

dc.typeProceedings paper
dspace.entity.typePublication
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