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Improved NBTI reliability with sub 1-nanometer EOT ZrO2 compared to HfO2 gate dielectric
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Improved NBTI reliability with sub 1-nanometer EOT ZrO2 compared to HfO2 gate dielectric
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Date
2013
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Cho, Moon Ju
;
Kaczer, Ben
;
Kauerauf, Thomas
;
Ragnarsson, Lars-Ake
;
Groeseneken, Guido
Journal
IEEE Electron Device Letters
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1780
since deposited on 2021-10-21
Acq. date: 2025-12-15
Citations
Metrics
Views
1780
since deposited on 2021-10-21
Acq. date: 2025-12-15
Citations