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Insight into electron traps and their energy distribution under positive bias temperature stress and hot carrier aging

Date

2016
Journal article
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dc.contributor.authorDuan, Meng
dc.contributor.authorZhang, Jian Fu
dc.contributor.authorJi, Zhigang
dc.contributor.authorZhang, Wei Dong
dc.contributor.authorVigar, David
dc.contributor.authorAsen, Asenov
dc.contributor.authorGerrer, Louis
dc.contributor.authorChandra, Vikas
dc.contributor.authorAitken, Rob
dc.contributor.authorKaczer, Ben
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.accessioned2021-10-23T10:41:29Z
dc.date.available2021-10-23T10:41:29Z
dc.date.embargo9999-12-31
dc.date.issued2016
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26582
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7530843/
dc.source.beginpage3642
dc.source.endpage3648
dc.source.issue9
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume63
dc.title

Insight into electron traps and their energy distribution under positive bias temperature stress and hot carrier aging

dc.typeJournal article
dspace.entity.typePublication
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