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Demonstration of ultra-thin Si grinding process controlled by in-situ non-contact gauge for 3D stacked IC (3D-SIC)

Date

2010
Proceedings Paper
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dc.contributor.authorZhao, Ming
dc.contributor.authorVerbinnen, Greet
dc.contributor.authorYoshida, Shinji
dc.contributor.authorHayakawa, Susumu
dc.contributor.authorTabuchi, Tomotaka
dc.contributor.authorJourdain, Anne
dc.contributor.authorBeyne, Eric
dc.contributor.authorSwinnen, Bart
dc.contributor.authorLeunissen, Peter
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorVerbinnen, Greet
dc.contributor.imecauthorJourdain, Anne
dc.contributor.imecauthorBeyne, Eric
dc.contributor.imecauthorSwinnen, Bart
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecBeyne, Eric::0000-0002-3096-050X
dc.date.accessioned2021-10-19T01:04:49Z
dc.date.available2021-10-19T01:04:49Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18427
dc.source.beginpage49
dc.source.conference7th Annual International Wafer-Level Packaging Conference
dc.source.conferencedate11/10/2010
dc.source.conferencelocationSanta Clara, CA USA
dc.source.endpage54
dc.title

Demonstration of ultra-thin Si grinding process controlled by in-situ non-contact gauge for 3D stacked IC (3D-SIC)

dc.typeProceedings paper
dspace.entity.typePublication
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