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Low temperature Si, SiGe, and Ge growth and atomic layer doping with B, P, and As on Si(001) by chemical vapor deposition
Publication:
Low temperature Si, SiGe, and Ge growth and atomic layer doping with B, P, and As on Si(001) by chemical vapor deposition
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Date
2008
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Takeuchi, Shotaro
;
Loo, Roger
;
Caymax, Matty
Journal
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1836
since deposited on 2021-10-17
Acq. date: 2025-12-16
Citations
Metrics
Views
1836
since deposited on 2021-10-17
Acq. date: 2025-12-16
Citations