Publication:

Low temperature Si, SiGe, and Ge growth and atomic layer doping with B, P, and As on Si(001) by chemical vapor deposition

Date

2008
Presentation
Simple item page Full metadata Statistics
 
dc.contributor.authorTakeuchi, Shotaro
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-17T11:07:00Z
dc.date.available2021-10-17T11:07:00Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14531
dc.source.conferenceSeminar Low Temperature Chemical Vapor Deposition
dc.source.conferencedate15/12/2008
dc.source.conferencelocationOsaka Japan
dc.title

Low temperature Si, SiGe, and Ge growth and atomic layer doping with B, P, and As on Si(001) by chemical vapor deposition

dc.typeOral presentation
dspace.entity.typePublication
Files
Publication available in collections:
Presentations