Publication:

Use of indium and gallium as P-type dopants in Si 0.1 mm MOSFETs

Date

1996
Journal article
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dc.contributor.authorBiesemans, Serge
dc.contributor.authorKubicek, Stefan
dc.contributor.authorDe Meyer, Kristin
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorDe Meyer, Kristin
dc.date.accessioned2021-09-29T14:17:27Z
dc.date.available2021-09-29T14:17:27Z
dc.date.embargo9999-12-31
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1093
dc.source.beginpage1037
dc.source.endpage1040
dc.source.issue2B
dc.source.journalJapanese Journal of Applied Physics. Part 1
dc.source.volume35
dc.title

Use of indium and gallium as P-type dopants in Si 0.1 mm MOSFETs

dc.typeJournal article
dspace.entity.typePublication
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