Publication:

Integration of 650 V GaN power ICs on 200 mm engineered substrates

Date

2020
Journal article
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dc.contributor.authorLi, Xiangdong
dc.contributor.authorGeens, Karen
dc.contributor.authorWellekens, Dirk
dc.contributor.authorZhao, Ming
dc.contributor.authorMagnani, Alessandro
dc.contributor.authorAmirifar, Nooshin
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorYou, Shuzhen
dc.contributor.authorFahle, Dirk
dc.contributor.authorHahn, Herwig
dc.contributor.authorHeuken, Michael
dc.contributor.authorOdnoblyudov, Vlad
dc.contributor.authorAktas, Ozgur
dc.contributor.authorBasceri, Cem
dc.contributor.authorMarcon, Denis
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorLi, Xiangdong
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorMagnani, Alessandro
dc.contributor.imecauthorAmirifar, Nooshin
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorHahn, Herwig
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecMagnani, Alessandro::0000-0001-6719-7467
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.contributor.orcidimecWellekens, Dirk::0000-0003-4532-5784
dc.date.accessioned2021-10-28T23:57:04Z
dc.date.available2021-10-28T23:57:04Z
dc.date.issued2020
dc.identifier.issn0894-6507
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35473
dc.identifier.urlhttps://ieeexplore.ieee.org/document/9170524
dc.source.beginpage534
dc.source.endpage538
dc.source.issue4
dc.source.journalIEEE Transactions on Semiconductor Manufacturing
dc.source.volume33
dc.title

Integration of 650 V GaN power ICs on 200 mm engineered substrates

dc.typeJournal article
dspace.entity.typePublication
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