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The influence of oxidation-induced stress on the generation current and its impact on scaled device performance

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dc.contributor.authorSmeys, Peter
dc.contributor.authorGriffin, P. B.
dc.contributor.authorRek, Z. U.
dc.contributor.authorDe Wolf, Ingrid
dc.contributor.authorSaraswat, K. C.
dc.contributor.imecauthorDe Wolf, Ingrid
dc.date.accessioned2021-09-29T15:27:39Z
dc.date.available2021-09-29T15:27:39Z
dc.date.embargo9999-12-31
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1501
dc.source.beginpage709
dc.source.conferenceInternational Electron Devices Meeting. Technical Digest - IEDM
dc.source.conferencedate8/12/1996
dc.source.conferencelocationSan Francisco, CA USA
dc.source.endpage12
dc.title

The influence of oxidation-induced stress on the generation current and its impact on scaled device performance

dc.typeProceedings paper
dspace.entity.typePublication
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