Publication:
Epitaxial Growth of Active Si on Top of SiGe Etch Stop Layer in View of 3D Device Integration
| dc.contributor.author | Becker, L. | |
| dc.contributor.author | Storck, P. | |
| dc.contributor.author | Loo, Roger | |
| dc.contributor.author | Jourdain, Anne | |
| dc.contributor.author | Rengo, Gianluca | |
| dc.contributor.author | Porret, Clément | |
| dc.contributor.author | Hikavyy, Andriy | |
| dc.contributor.author | Liebens, Maarten | |
| dc.contributor.author | Beyer, Gerald | |
| dc.contributor.author | Beyne, Eric | |
| dc.contributor.imecauthor | Loo, Roger | |
| dc.contributor.imecauthor | Jourdain, Anne | |
| dc.contributor.imecauthor | Rengo, Gianluca | |
| dc.contributor.imecauthor | Porret, Clément | |
| dc.contributor.imecauthor | Hikavyy, Andriy | |
| dc.contributor.imecauthor | Liebens, Maarten | |
| dc.contributor.imecauthor | Beyer, Gerald | |
| dc.contributor.imecauthor | Beyne, Eric | |
| dc.contributor.orcidext | Becker, L.::0000-0003-1509-3476 | |
| dc.contributor.orcidimec | Loo, Roger::0000-0003-3513-6058 | |
| dc.contributor.orcidimec | Hikavyy, Andriy::0000-0002-8201-075X | |
| dc.contributor.orcidimec | Beyne, Eric::0000-0002-3096-050X | |
| dc.contributor.orcidimec | Porret, Clément::0000-0002-4561-348X | |
| dc.date.accessioned | 2022-03-02T09:18:10Z | |
| dc.date.available | 2022-03-02T09:18:10Z | |
| dc.date.issued | 2021 | |
| dc.identifier.doi | 10.1149/2162-8777/abd885 | |
| dc.identifier.issn | 2162-8769 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/39208 | |
| dc.publisher | ELECTROCHEMICAL SOC INC | |
| dc.source.beginpage | 014001 | |
| dc.source.issue | 1 | |
| dc.source.journal | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | |
| dc.source.numberofpages | 8 | |
| dc.source.volume | 10 | |
| dc.subject.keywords | CHEMICAL-VAPOR-DEPOSITION | |
| dc.subject.keywords | SPECTROSCOPIC ELLIPSOMETRY | |
| dc.subject.keywords | CARRIER GAS | |
| dc.subject.keywords | IN-LINE | |
| dc.subject.keywords | TEMPERATURE | |
| dc.subject.keywords | SI1-XGEX | |
| dc.subject.keywords | QUALITY | |
| dc.subject.keywords | SILICON | |
| dc.title | Epitaxial Growth of Active Si on Top of SiGe Etch Stop Layer in View of 3D Device Integration | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
| Files | ||
| Publication available in collections: |