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Impact of EUV lithography line edge roughness on 16 nm memory generation

Date

2011
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dc.contributor.authorVaglio Pret, Alessandro
dc.contributor.authorPoliakov, Pavel
dc.contributor.authorBianchi, Davide
dc.contributor.authorGronheid, Roel
dc.contributor.authorBlomme, Pieter
dc.contributor.authorMiranda Corbalan, Miguel
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorDehaene, Wim
dc.contributor.imecauthorVaglio Pret, Alessandro
dc.contributor.imecauthorGronheid, Roel
dc.contributor.imecauthorBlomme, Pieter
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorDehaene, Wim
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2021-10-19T20:03:11Z
dc.date.available2021-10-19T20:03:11Z
dc.date.embargo9999-12-31
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19935
dc.source.conference55th International conference on Electron, Ion and Photon Beam Technology and Nanofabrication - EIPBN
dc.source.conferencedate31/05/2011
dc.source.conferencelocationLas Vegas, NV USA
dc.title

Impact of EUV lithography line edge roughness on 16 nm memory generation

dc.typeOral presentation
dspace.entity.typePublication
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