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Surface termination of HfO2 in W/HfO2 gated metal-oxide-semiconductor stacks from thermal stability point of view
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Surface termination of HfO2 in W/HfO2 gated metal-oxide-semiconductor stacks from thermal stability point of view
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Date
2008
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Li, Zilan
;
Pourtois, Geoffrey
;
Schram, Tom
;
De Gendt, Stefan
;
De Meyer, Kristin
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Abstract
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1945
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Acq. date: 2025-12-09
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Metrics
Views
1945
since deposited on 2021-10-17
6
last month
2
last week
Acq. date: 2025-12-09
Citations