Publication:
Surface termination of HfO2 in W/HfO2 gated metal-oxide-semiconductor stacks from thermal stability point of view
Date
| dc.contributor.author | Li, Zilan | |
| dc.contributor.author | Pourtois, Geoffrey | |
| dc.contributor.author | Schram, Tom | |
| dc.contributor.author | De Gendt, Stefan | |
| dc.contributor.author | De Meyer, Kristin | |
| dc.contributor.imecauthor | Pourtois, Geoffrey | |
| dc.contributor.imecauthor | Schram, Tom | |
| dc.contributor.imecauthor | De Gendt, Stefan | |
| dc.contributor.imecauthor | De Meyer, Kristin | |
| dc.contributor.orcidimec | Pourtois, Geoffrey::0000-0003-2597-8534 | |
| dc.contributor.orcidimec | De Gendt, Stefan::0000-0003-3775-3578 | |
| dc.date.accessioned | 2021-10-17T08:21:59Z | |
| dc.date.available | 2021-10-17T08:21:59Z | |
| dc.date.issued | 2008 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/14031 | |
| dc.source.conference | 5th International Symposium on Advanced Gate Stack Technology | |
| dc.source.conferencedate | 28/09/2008 | |
| dc.source.conferencelocation | Austin, TX USA | |
| dc.title | Surface termination of HfO2 in W/HfO2 gated metal-oxide-semiconductor stacks from thermal stability point of view | |
| dc.type | Oral presentation | |
| dspace.entity.type | Publication | |
| Files | ||
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