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Highly doped SiGe epitaxy in view of S/D applications

Date

2020-07
Meeting abstract
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dc.contributor.authorRengo, Gianluca
dc.contributor.authorPorret, Clément
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorRosseel, Erik
dc.contributor.authorNakazaki, Nobuya
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorVantomme, Andre
dc.contributor.authorLoo, Roger
dc.contributor.imecauthorRengo, Gianluca
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorNakazaki, Nobuya
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-29T02:57:00Z
dc.date.available2021-10-29T02:57:00Z
dc.date.issued2020-07
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35823
dc.identifier.urlhttps://ecs.confex.com/ecs/prime2020/meetingapp.cgi/Paper/140141
dc.source.beginpageG03-1731
dc.source.conferenceECS2020 Fall Meeting: SiGe, Ge & Related Compounds: Materials, Processing and Devices
dc.source.conferencedate4/10/2020
dc.source.conferencelocationHonululu USA
dc.title

Highly doped SiGe epitaxy in view of S/D applications

dc.typeMeeting abstract
dspace.entity.typePublication
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