Publication:

Evidence of time-dependent vertical breakdown in GaN-on-Si HEMTs

Date

2017
Journal article
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dc.contributor.authorBorga, Matteo
dc.contributor.authorMeneghini, Matteo
dc.contributor.authorRossetto, Isabella
dc.contributor.authorStoffels, Steve
dc.contributor.authorPosthuma, Niels
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorMarcon, Denis
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.authorZanoni, Enrico
dc.contributor.imecauthorBorga, Matteo
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecBorga, Matteo::0000-0003-3087-6612
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-24T03:05:52Z
dc.date.available2021-10-24T03:05:52Z
dc.date.issued2017
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27898
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7994660/
dc.source.beginpage3616
dc.source.endpage3621
dc.source.issue9
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume64
dc.title

Evidence of time-dependent vertical breakdown in GaN-on-Si HEMTs

dc.typeJournal article
dspace.entity.typePublication
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