Publication:

Effect of deposition and anneal temperature on batch-ALD deposited ZrO2/Al2O3/ZrO2 films for DRAM MIM capacitor applications

Date

2008
Proceedings Paper
Simple item page Full metadata Statistics
 
dc.contributor.authorDilliway, G.
dc.contributor.authorPierreux, D.
dc.contributor.authorFischer, P.
dc.contributor.authorMenou, Nicolas
dc.contributor.authorPawlak, Malgorzata
dc.contributor.authorWang, Xin Peng
dc.contributor.authorWouters, Dirk
dc.date.accessioned2021-10-17T06:55:37Z
dc.date.available2021-10-17T06:55:37Z
dc.date.embargo9999-12-31
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13668
dc.source.conference8th International Conference on Atomic Layer Deposition - ALD
dc.source.conferencedate29/06/2008
dc.source.conferencelocationBrugge Belgium
dc.title

Effect of deposition and anneal temperature on batch-ALD deposited ZrO2/Al2O3/ZrO2 films for DRAM MIM capacitor applications

dc.typeProceedings paper
dspace.entity.typePublication
Files

Original bundle

Name:
17969.pdf
Size:
779.46 KB
Format:
Adobe Portable Document Format
Download
Publication available in collections:
Conference contributions