Publication:

Enabling complimentary FET (CFET) fabrication: selective, isotropic etch of Group IV semiconductors

Date

2019
Meeting abstract
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dc.contributor.authorKal, Subhadeep
dc.contributor.authorOniki, Yusuke
dc.contributor.authorFalugh, Matthew
dc.contributor.authorPereira, Cheryl
dc.contributor.authorWang, Qi
dc.contributor.authorHolsteyns, Frank
dc.contributor.authorSmith, Jeffrey
dc.contributor.authorMosden, Aelan
dc.contributor.authorKumar, Kaushik
dc.contributor.authorBoemmels, Juergen
dc.contributor.authorRyckaert, Julien
dc.contributor.authorBiolsi, Peter
dc.contributor.authorHurd, Trace Q
dc.contributor.imecauthorOniki, Yusuke
dc.contributor.imecauthorHolsteyns, Frank
dc.contributor.imecauthorKumar, Kaushik
dc.contributor.imecauthorBoemmels, Juergen
dc.contributor.imecauthorRyckaert, Julien
dc.contributor.orcidimecOniki, Yusuke::0000-0002-6619-1327
dc.date.accessioned2021-10-27T11:02:08Z
dc.date.available2021-10-27T11:02:08Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33236
dc.identifier.urlhttps://doi.org/10.1117/12.2514741
dc.source.beginpage109630L
dc.source.conferenceAdvanced Etch Technology for Nanopatterning VIII
dc.source.conferencedate24/02/2019
dc.source.conferencelocationSan Jose, CA USA
dc.title

Enabling complimentary FET (CFET) fabrication: selective, isotropic etch of Group IV semiconductors

dc.typeMeeting abstract
dspace.entity.typePublication
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